Part Number Hot Search : 
C1H10 TLV3862Q CD4050 00201 425F3XKM 2SD96 CXA20 AP432R
Product Description
Full Text Search
 

To Download HFA3102 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  1 ? fn3635.4 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2003. all rights reserved all other trademarks mentioned are the property of their respective owners. HFA3102 dual long-tailed pair transistor array the HFA3102 is an all npn transistor array configured as dual differential amplifiers wit h tail transistors. based on intersil bonded wafer uhf-1 soi process, this array achieves very high f t (10ghz) while maintaining excellent h fe and v be matching characteristics over temperature. collector leakage currents are maintained to under 0.01na. pinout/functional diagram HFA3102 (soic) top view features ? high gain-bandwidth product (f t ) . . . . . . . . . . . . . 10ghz ? high power gain-bandwidth product. . . . . . . . . . . . 5ghz ? high current gain (h fe ) . . . . . . . . . . . . . . . . . . . . . . . 70 ? noise figure (transistor) . . . . . . . . . . . . . . . . . . . . 3.5db ? low collector leakage current . . . . . . . . . . . . . . <0.01na ? excellent h fe and v be matching ? pin-to-pin to upa102g applications ? single balanced mixers ? wide band amplification stages ? differential amplifiers ? multipliers ? automatic gain control circuits ? frequency doublers, tripplers ? oscillators ? constant current sources ? wireless communication systems ? radio and satellite communications ? fiber optic signal processing ? high performance instrumentation ordering information part number temp. range ( o c) package pkg. dwg. # HFA3102b96 -40 to 85 14 ld soic tape and reel m14.15 1234567 14 13 12 11 10 9 8 q 1 q 2 q 3 q 4 q 5 q 6 data sheet may 2003
2 absolute maximum ratings t a =25 o c thermal information v ceo collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . 8.0v v cbo collector to base voltage. . . . . . . . . . . . . . . . . . . . . . . 12.0v v ebo emitter to base voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0v i c , collector current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30ma operating conditions temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . -40 o c to 85 o c thermal resistance (typical, note 1) ja ( o c/w) soic package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 maximum power dissipation at 75 o c any one transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25w maximum junction temperature (die). . . . . . . . . . . . . . . . . . . .175 o c maximum junction temperature (plastic package) . . . . . . . .150 o c maximum storage temperature range . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . .300 o c (soic - lead tips only) caution: stresses above those listed in ?abs olute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. ja is measured with the component mounted on an evaluation pc board in free air. electrical specifications t a = 25 o c symbols parameter test conditions (note 2) test level all grades units min typ max v (br)cbo collector-to-base breakdown voltage (q 1 , q 2 , q 4 , and q 5 ) i c = 100 a, i e = 0 a 12 18 - v v (br)ceo collector-to-emitter breakdown voltage (q 1 thru q 6 ) i c = 100 a, i b = 0 a 8 12 - v v (br)ebo emitter-to-base breakdown voltage (q 3 and q 6 ) i e = 50 a, i c = 0 a 5.5 6 - v i cbo collector cutoff current (q 1 , q 2 , q 4 , and q 5 ) v cb = 5v, i e = 0 a - 0.1 10 ? i ebo emitter cutoff current (q 3 and q 6 )v eb = 1v, i c = 0 a - - 100 ? h fe dc current gain (q 1 thru q 6 )i c = 10ma, v ce = 3v a 40 70 - - c cb collector-to-base capacitance v cb = 5v, f = 1mhz b - 300 - ff c eb emitter-to-base capacitance v eb = 0, f = 1mhz b - 200 - ff f t current gain-bandwidth product i c = 10ma, v ce = 5v c - 10 - ghz f max power gain - bandwidth product i c = 10ma, v ce = 5v c - 5 - ghz g nfmin available gain at minimum noise figure i c = 3ma, v ce = 3v f = 0.5ghz c - 17.5 - db f = 1.0ghz c - 12.4 - db nf min minimum noise figure i c = 3ma, v ce = 3v f = 0.5ghz c - 1.8 - db f = 1.0ghz c - 2.1 - db nf 50 ? 50 ? noise figure i c = 3ma, v ce = 3v f = 0.5ghz c - 3.3 - db f = 1.0ghz c - 3.5 - db h fe1 /h fe2 dc current gain matching (q 1 and q 2 , q 4 and q 5 ) i c = 10ma, v ce = 3v a 0.9 1.0 1.1 - v os input offset voltage (q 1 and q 2 ), (q 4 and q 5 ) i c = 10ma, v ce = 3v a - 1.5 5 mv i os input offset current (q 1 and q 2 ), (q 4 and q 5 ) i c = 10ma, v ce = 3v a - 5 25 a dv os /dt input offset voltage tc (q 1 and q 2 , q 4 and q 5 ) i c = 10ma, v ce = 3v c - 0.5 - v/ o c i trench- leakage collector-to-collector leakage (pin 6, 7, 13, and 14) ? v test = 5v b - 0.01 - na note: 2. test level: a. production tested; b. typical or guaranteed limit based on characterizati on; c. design typical for information onl y HFA3102
3 pspice model for a single transistor .model nuhfarry npn + ( is= 1.840e-16 xti= 3.000e+00 eg= 1.110e+00 vaf= 7.200e+01 + var= 4.500e+00 bf= 1.036e+02 ise= 1.686e-19 ne= 1.400e+00 + ikf= 5.400e-02 xtb= 0.000e+00 br= 1.000e+01 isc= 1.605e-14 + nc= 1.800e+00 ikr= 5.400e-02 rc= 1.140e+01 cjc= 3.980e-13 + mjc= 2.400e-01 vjc= 9.700 e-01 fc= 5.000e-01 cje= 2.400e-13 + mje= 5.100e-01 vje= 8.690e-01 tr= 4.000e-09 tf= 10.51e-12 + itf= 3.500e-02 xtf= 2.300e+00 vtf= 3.500e+00 ptf= 0.000e+00 + xcjc= 9.000e-01 cjs= 1.689e-13 vjs= 9.982e-01 mjs= 0.000e+00 + re= 1.848e+00 rb= 5.007e +01 rbm= 1.974e+00 kf= 0.000e+00 + af= 1.000e+00) common emitter s-parameters v ce = 5v and i c = 5ma freq. (hz) |s 11 | phase(s 11 )|s 12 | phase(s 12 )|s 21 |phase(s 21 )|s 22 | phase(s 22 ) 1.0e+08 0.833079 -11.7873 1.418901e-02 78.8805 11.0722 168.576 0.976833 -11.0509 2.0e+08 0.791776 -22.8290 2.695740e-02 68.6355 10.5177 157.897 0.930993 -21.3586 3.0e+08 0.734911 -32.6450 3.750029e-02 59.5861 9.75379 148.443 0.868128 -30.4451 4.0e+08 0.672811 -41.0871 4.572138e-02 51.9018 8.91866 140.361 0.799886 -38.1641 5.0e+08 0.612401 -48.2370 5.194147e-02 45.5043 8.10511 133.569 0.734033 -44.5998 6.0e+08 0.557126 -54.2780 5.659943e-02 40.2112 7.35944 127.882 0.674392 -49.9370 7.0e+08 0.508133 -59.4102 6.009507e-02 35.8226 6.69712 123.102 0.622181 -54.3777 8.0e+08 0.465361 -63.8123 6.274213e-02 32.1594 6.11750 119.047 0.577269 -58.1022 9.0e+08 0.428238 -67.6313 6.477134e-02 29.0743 5.61303 115.571 0.538952 -61.2587 1.0e+09 0.396034 -70.9834 6.634791e-02 26.4506 5.17405 112.556 0.506365 -63.9647 1.1e+09 0.368032 -73.9591 6.758932e-02 24.1974 4.79104 109.913 0.478663 -66.3116 1.2e+09 0.343589 -76.6285 6.857937e-02 22.2441 4.45546 107.570 0.455091 -68.3702 1.3e+09 0.322155 -79.0462 6.937837e-02 20.5358 4.15997 105.472 0.435008 -70.1958 1.4e+09 0.303268 -81.2548 7.003020e-02 19.0293 3.89845 103.576 0.417872 -71.8314 1.5e+09 0.286542 -83.2880 7.056718e-02 17.6908 3.66577 101.849 0.403238 -73.3108 1.6e+09 0.271660 -85.1723 7.101343e-02 16.4930 3.45770 100.262 0.390735 -74.6609 1.7e+09 0.258359 -86.9292 7.138717e-02 15.4143 3.27074 98.7956 0.380056 -75.9030 1.8e+09 0.246420 -88.5759 7.170231e-02 14.4370 3.10197 97.4307 0.370947 -77.0544 1.9e+09 0.235659 -90.1265 7.196964e-02 13.5469 2.94897 96.1533 0.363195 -78.1288 2.0e+09 0.225923 -91.5925 7.219757e-02 12.7319 2.80969 94.9515 0.356623 -79.1377 2.1e+09 0.217085 -92.9836 7.239274e-02 11.9824 2.68243 93.8156 0.351081 -80.0903 2.2e+09 0.209034 -94.3076 7.256046e-02 11.2901 2.56573 92.7373 0.346442 -80.9942 2.3e+09 0.201678 -95.5713 7.270498e-02 10.6480 2.45837 91.7097 0.342599 -81.8557 2.4e+09 0.194939 -96.7803 7.282977e-02 10.0503 2.35928 90.7271 0.339458 -82.6802 2.5e+09 0.188747 -97.9395 7.293764e-02 9.49212 2.26756 89.7844 0.336942 -83.4719 2.6e+09 0.183044 -99.0530 7.303093e-02 8.96908 2.18243 88.8775 0.334982 -84.2347 2.7e+09 0.177780 -100.124 7.311157e-02 8.47753 2.10322 88.0026 0.333518 -84.9716 2.8e+09 0.172909 -101.156 7.318117e-02 8.01430 2.02934 87.1565 0.332499 -85.6853 2.9e+09 0.168394 -102.152 7.324107e-02 7.57661 1.96027 86.3366 0.331879 -86.3781 3.0e+09 0.164200 -103.114 7.329243e-02 7.16204 1.89556 85.5404 0.331620 -87.0518 HFA3102
4 v ce = 5v and i c = 10ma freq. (hz) |s 11 | phase(s 11 )|s 12 | phase(s 12 )|s 21 |phase(s 21 )|s 22 | phase(s 22 ) 1.0e+08 0.728106 -16.4319 1.273920e-02 75.4177 15.1273 165.227 0.959692 -14.2688 2.0e+08 0.670836 -31.2669 2.342300e-02 62.8941 13.9061 152.045 0.886232 -26.9507 3.0e+08 0.600268 -43.7663 3.132521e-02 52.5891 12.3970 141.185 0.796016 -37.3172 4.0e+08 0.531768 -54.0028 3.681579e-02 44.5019 10.9257 132.570 0.708892 -45.4503 5.0e+08 0.471795 -62.3880 4.057046e-02 38.2308 9.62995 125.781 0.633146 -51.7704 6.0e+08 0.421506 -69.3569 4.316292e-02 33.3405 8.53559 120.378 0.570209 -56.7206 7.0e+08 0.379961 -75.2612 4.499071e-02 29.4764 7.62375 116.005 0.518803 -60.6598 8.0e+08 0.345693 -80.3608 4.631140e-02 26.3755 6.86423 112.398 0.476987 -63.8540 9.0e+08 0.317301 -84.8420 4.728948e-02 23.8481 6.22797 109.365 0.442915 -66.4948 1.0e+09 0.293608 -88.8381 4.803091e-02 21.7581 5.69057 106.771 0.415044 -68.7193 1.1e+09 0.273680 -92.4452 4.860515e-02 20.0070 5.23257 104.518 0.392146 -70.6269 1.2e+09 0.256782 -95.7336 4.905871e-02 18.5224 4.83873 102.532 0.373261 -72.2899 1.3e+09 0.242344 -98.7555 4.942344e-02 17.2505 4.49716 100.759 0.357640 -73.7620 1.4e+09 0.229918 -101.551 4.972158e-02 16.1506 4.19854 99.1602 0.344698 -75.0832 1.5e+09 0.219152 -104.150 4.996903e-02 15.1915 3.93554 97.7028 0.333974 -76.2840 1.6e+09 0.209767 -106.577 5.017730e-02 14.3490 3.70234 96.3629 0.325102 -77.3877 1.7e+09 0.201539 -108.851 5.035491e-02 13.6040 3.49428 95.1215 0.317789 -78.4122 1.8e+09 0.194288 -110.988 5.050825e-02 12.9411 3.30758 93.9633 0.311800 -79.3715 1.9e+09 0.187867 -113.001 5.064218e-02 12.3482 3.13919 92.8761 0.306940 -80.2768 2.0e+09 0.182157 -114.902 5.076045e-02 11.8151 2.98658 91.8500 0.303051 -81.1365 2.1e+09 0.177056 -116.698 5.086598e-02 11.3338 2.84766 90.8766 0.300003 -81.9578 2.2e+09 0.172484 -118.399 5.096107e-02 10.8974 2.72068 89.9494 0.297686 -82.7460 2.3e+09 0.168370 -120.012 5.104755e-02 10.5001 2.60420 89.0626 0.296007 -83.5057 2.4e+09 0.164656 -121.542 5.112690e-02 10.1373 2.49697 88.2115 0.294889 -84.2405 2.5e+09 0.161293 -122.996 5.120031e-02 9.80479 2.39793 87.3920 0.294266 -84.9533 2.6e+09 0.158239 -124.378 5.126876e-02 9.49919 2.30619 86.6007 0.294081 -85.6466 2.7e+09 0.155458 -125.694 5.133304e-02 9.21750 2.22098 85.8348 0.294285 -86.3223 2.8e+09 0.152919 -126.947 5.139381e-02 8.95716 2.14162 85.0916 0.294836 -86.9822 2.9e+09 0.150595 -128.140 5.145164e-02 8.71595 2.06753 84.3690 0.295696 -87.6275 3.0e+09 0.148463 -129.279 5.150697e-02 8.49194 1.99820 83.6651 0.296834 -88.2595 HFA3102
5 typical performance curves figure 1. i c vs v ce figure 2. h fe vs i c figure 3. gummel plot figure 4. f t vs i c figure 5. gain and noise fi gure vs frequency figure 6. p 1db and 3rd order intercept v ce (v) i c (ma) 12 10 8 6 4 2 0 012345 i b = 150 a i b = 30 a i b = 120 a i b = 60 a i b = 90 a i c (a) h fe 0 20 40 60 80 100 120 140 10 -10 10 -8 10 -6 10 -4 10 -2 10 0 v be (v) i c and i b (a) v ce = 3v 10 0 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 0.4 0.6 0.8 1.0 f t (ghz) i c (a) 10 -4 10 -3 10 -2 10 -1 12 10 8 6 4 2 0 v ce = 5v noise figure (db) frequency (ghz) |s 21 | (db) 4.8 4.6 4.4 4.2 4.0 3.8 3.6 3.4 3.2 0 0.5 1.0 1.5 2.0 2.5 3.0 20 18 14 12 10 8 6 4 16 -30 -20 -10 0 10 -100 -80 -60 -40 -20 0 20 40 v ce = 5v i c = 10ma f = 1ghz p in , input power (dbm) p out , output power (dbm) 3rd order products 3rd order intercept point 1db compression point HFA3102
6 die characteristics process: uhf-1 die dimensions: 53 mils x 52 mils x 14 mils 1340 m x 1320 m x 355.6 m metallization: type: metal 1: alcu(2%)/tiw thickness: metal 1: 8k ? 0.5k ? type: metal 2: alcu(2%) thickness: metal 2: 16k ? 0.8k ? passivation: type: nitride thickness: 4k ? 0.5k ? substrate potential (powered up): floating metallization mask layout HFA3102 top view pad numbers correspond to the 14 pin soic pinout. 1 14 13 12 11 10 9 8 7 6 5 4 3 2 1340 m (53 mils) 1320 m (52 mils) HFA3102
7 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality ce rtifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that da ta sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com HFA3102 small outline plast ic packages (soic) notes: 1. symbols are defined in the ?mo series symbol list? in section 2.2 of publication number 95. 2. dimensioning and tolerancing per ansi y14.5m - 1982. 3. dimension ?d? does not include mold flash, protrusions or gate burrs. mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. dimension ?e? does not include inte rlead flash or protrusions. interlead flash and protrusions shall not ex ceed 0.25mm (0.010 inch) per side. 5. the chamfer on the body is optional. if it is not present, a visual index feature must be located within the crosshatched area. 6. ?l? is the length of terminal for soldering to a substrate. 7. ?n? is the number of terminal positions. 8. terminal numbers are shown for reference only. 9. the lead width ?b?, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. controlling dimension: millimete r. converted inch dimensions are not necessarily exact. index area e d n 123 -b- 0.25(0.010) c a m bs e -a- l b m -c- a1 a seating plane 0.10(0.004) h x 45 o c h 0.25(0.010) b m m m14.15 (jedec ms-012-ab issue c) 14 lead narrow body small outline plastic package symbol inches millimeters notes min max min max a 0.0532 0.0688 1.35 1.75 - a1 0.0040 0.0098 0.10 0.25 - b 0.013 0.020 0.33 0.51 9 c 0.0075 0.0098 0.19 0.25 - d 0.3367 0.3444 8.55 8.75 3 e 0.1497 0.1574 3.80 4.00 4 e 0.050 bsc 1.27 bsc - h 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 l 0.016 0.050 0.40 1.27 6 n14 147 0 o 8 o 0 o 8 o - rev. 0 12/93


▲Up To Search▲   

 
Price & Availability of HFA3102

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X